Molecular Emission of CF 4 Gas in Low-pressure Inductively Coupled Plasma
Molecular Emission of CF 4 Gas in Low-pressure Inductively Coupled Plasma
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低压电感耦合等离子体中CF 4 气体的分子发射
DOI：
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
H. B. Lim
中科院分区：
文献类型：
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作者：
T. Jung;Donghoon Kim;H. B. Lim
CF 4气体是半导体制造工艺中用于干蚀刻的最常见化学品之一。为了应用于刻蚀工艺和环境控制，采用低压电感耦合等离子体（LP-ICP）技术获得了CF 4气体的光谱。根据光谱分析，检测到了由A-X和B-X跃迁产生的微量CF自由基。实验中未观察到其它CFx自由基，如CF2和CF 3，但观察到CF 4气体的分解产物C和C2的强发射。
CF 4 gas is one of the most common chemicals used for dry etching in semiconductor manufacturing processes. For application to the etching process and environmental control, the low-pressure inductively coupled plasma (LP-ICP) was employed to obtain the spectrum of CF 4 gas. In terms of the analysis of the spectra, trace CF radical by A-X and B-X transitions was detected. The other CF x radicals, such as CF 2 and CF 3 , were not seen in this experiment whereas strong C and C 2 emissions, dissociation products of CF 4 gas, were observed.