Study of GaN:Eu3+ Thin Films Deposited by Metallorganic Vapor-Phase Epitaxy
Study of GaN:Eu3+ Thin Films Deposited by Metallorganic Vapor-Phase Epitaxy
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金属有机气相外延沉积GaN:Eu3薄膜的研究
DOI：
10.1149/1.2969910
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发表时间：
2008
影响因子：
3.9
通讯作者：
J. Talbot
中科院分区：
文献类型：
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作者：
J. Laski;K. Klinedinst;M. Raukas;K. Mishra;J. Tao;J. McKittrick;J. Talbot
使用金属有机气相外延，在大气压下将由 Eu 3+ (GaN:Eu 3+ ) 激活的氮化镓薄膜沉积在蓝宝石衬底上。使用光致发光 (PL) 和 PL 激发光谱研究了 GaN 中 Eu 3+ 离子的发光。实验结果表明Eu 3+ 离子通过主体的能量转移而被激发。对观察到的发射和激发光谱的分析表明氮化物晶格中多个位点的占据。使用脉冲激光源，还检查了发射强度随激发强度增加的变化。从发光二极管光源的应用角度讨论了高激发强度下发射饱和的可能性。
Using metallorganic vapor-phase epitaxy, thin films of gallium nitride activated by Eu 3+ (GaN:Eu 3+ ) have been deposited on sapphire substrates at atmospheric pressure. Luminescence from Eu 3+ ions in GaN has been investigated using photoluminescence (PL) and PL excitation spectroscopy. Experimental results show that Eu 3+ ions are excited via energy transfer from the host. Analyses of the observed emission and excitation spectra indicate occupancy of multiple sites in the nitride lattice. Using a pulsed laser source, variation of emission intensity with increasing excitation intensity has also been examined. The possibility of emission saturation at high excitation intensity is discussed from the perspective of application in light-emitting diode sources.
Eu 掺杂 GaN 红光发射的光学过程
DOI：
--
发表时间：
2005
期刊：
Science and Technology of Advanced Materials 6
影响因子：
--
作者：
J. Sawahata;H. Bang;J. Seo;and K. Akimoto
通讯作者：
and K. Akimoto