Optimization of conditions for growth of vanadium dioxide thin films on silicon by pulsed-laser deposition
Optimization of conditions for growth of vanadium dioxide thin films on silicon by pulsed-laser deposition
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DOI：
10.1063/1.4934226
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发表时间：
2015-10
期刊：
影响因子：
1.6
通讯作者：
K. Shibuya;A. Sawa
中科院分区：
文献类型：
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作者：
K. Shibuya;A. Sawa
本文系统地研究了衬底温度（TS）和氧分压（PO 2）对脉冲激光沉积在Si（100）衬底上直接生长的多晶VO 2薄膜的结构和光学性质的影响。在TS ≥ 450 °C、PO 2值为5 ~ 20 mTorr的条件下，形成了金红石型的VO 2相，而其他结构的钒氧化物在较低温度或较高氧压下稳定。在550 °C或更高的生长温度下，由于V O2在硅衬底表面上的团聚，V O2膜的表面粗糙度显著增加。在TS为450 °C或更高的条件下生长的VO 2薄膜中，观察到在金属-绝缘体转变（MIT）温度范围内折射率的明显变化。在高于和低于MIT温度的1550 nm的波长处的折射率的差异受TS和PO 2两者的影响，并且对于在450 °C和20 mTorr下生长的VO 2膜最大。根据实验结果，我们推导出了PO 2...
We systematically examined the effects of the substrate temperature (TS) and the oxygen pressure (PO2) on the structural and optical properties polycrystalline V O2 films grown directly on Si(100) substrates by pulsed-laser deposition. A rutile-type V O2 phase was formed at a TS ≥ 450 °C at PO2 values ranging from 5 to 20 mTorr, whereas other structures of vanadium oxides were stabilized at lower temperatures or higher oxygen pressures. The surface roughness of the V O2 films significantly increased at growth temperatures of 550 °C or more due to agglomeration of V O2 on the surface of the silicon substrate. An apparent change in the refractive index across the metal–insulator transition (MIT) temperature was observed in V O2 films grown at a TS of 450 °C or more. The difference in the refractive index at a wavelength of 1550 nm above and below the MIT temperature was influenced by both the TS and PO2, and was maximal for a V O2 film grown at 450 °C under 20 mTorr. Based on the results, we derived the PO2...