Silicon interlayer based surface passivation of near‐surface quantum wells
Silicon interlayer based surface passivation of near‐surface quantum wells
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基于硅层间的近表面量子阱表面钝化
DOI：
10.1116/1.587814
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发表时间：
1995
影响因子：
1.4
通讯作者：
H. Hasegawa
中科院分区：
文献类型：
--
作者：
S. Kodama;S. Koyanagi;T. Hashizume;H. Hasegawa
鉴于迫切需要建立适用于化合物半导体量子结构表面的钝化技术，将最新版本的基于硅中间层的钝化工艺应用于Al 0. 3Ga 0. 7As/GaAs/Al 0. 3Ga 0. 7As近表面量子威尔斯（QW）的钝化。该工艺利用一个双分子束外延硅/双光子光增强化学气相沉积（pho-CVD）氮化硅双层作为界面控制层，以及厚pho-CVD SiO2层的主钝化电介质。通过比较钝化样品与未钝化量子阱的光致发光（PL）强度来研究钝化的有效性，未钝化量子阱的PL强度随着表面到阱距离的减小而呈指数下降。通过钝化实现了PL强度的完全恢复，最大恢复因子大于103，这与最近在In0.53Ga0.上实现的低1010 cm-2 eV-1范围内降低的界面态密度一致。
In view of the urgent necessity to establish a suitable passivation technology applicable to compound semiconductor quantum structure surfaces, the latest version of the silicon interlayer based passivation process was applied to passivation of Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As near‐surface quantum wells (QWs). The process utilizes an ultrathin molecular beam epitaxy silicon/ultrathin photo‐enhanced chemical vapor deposition (photo‐CVD) silicon nitride double layer as the interface control layer together with a main passivation dielectric of thick photo‐CVD SiO2 layer. The effectiveness of passivation was studied by comparing the photoluminescence (PL) intensities of passivated samples with those of unpassivated QWs that showed exponential decrease with reduction of surface‐to‐well distance. A complete recovery of PL intensity was achieved by passivation with a maximum recovery factor larger than 103, consistent with reduced interface state densities in low 1010 cm−2 eV−1 range recently realized on In0.53Ga0...