Effect of different trap states on the electron transport of photoanodes in dye sensitized solar cells
Effect of different trap states on the electron transport of photoanodes in dye sensitized solar cells
复制标题
不同陷阱态对染料敏化太阳能电池光电阳极电子传输的影响
DOI:
10.1016/j.jpowsour.2014.01.086
复制
发表时间:
2014
影响因子:
9.2
通讯作者:
Han Liyuan
中科院分区:
文献类型:
--
作者:
Zhang Jing;Feng Jiangwei;Hong Yang;Zhu Yuejin;Han Liyuan
Trap states play important role in electron transport of dye sensitized solar cells (DSSCs). Different trap states (surface and bulk traps) contribute differently to the performance of DSSCs. However, there is a lack of classification of the trap states, especially in recent doping works of the photoanodes. In this work, the Ce4+(0.3, 0.6 and 0.9% molar ratio) in TiO2and Ti4+(15, 40 and 70% molar ratio) in SnO2are assigned to surface traps and surface-and-bulk coexisted traps, respectively. The property of each trap state and its influence to the electron transport are characterized. Both the surface and bulk traps deteriorate the electron transport in DSSCs, however, the negative role of surface traps can easily be eliminated by surface modification in contrast to the bulk traps. Furthermore, contrary to the literature that the trap states will accelerate the interface recombination, it is found that the interface electron recombination time is prolonged with Ce4+surface traps in TiO2and Ti4+bulk traps in SnO2, indicating that the recombination time is closely related to the property of the trap states.