The electronic structure of surface chains in the layered semiconductor In4Se3(100)
The electronic structure of surface chains in the layered semiconductor In4Se3(100)
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DOI：
10.1063/1.2894577
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发表时间：
2008-03
影响因子：
4
通讯作者：
Y. Losovyj;M. Klinke;En Cai;Idaykis Rodriguez;Jiandi Zhang;L. Makinistian;A. Petukhov;E. Albanesi;P. Galiy;Ya. M. Fiyala;Jing Liu;P. Dowben
中科院分区：
文献类型：
--
作者：
Y. Losovyj;M. Klinke;En Cai;Idaykis Rodriguez;Jiandi Zhang;L. Makinistian;A. Petukhov;E. Albanesi;P. Galiy;Ya. M. Fiyala;Jing Liu;P. Dowben
层状 In4Se3 单晶的有序 (100) 表面具有半导体准一维铟 (In) 链的特征。在价带最大值附近观察到在表面平面中具有显着色散的带。该能带沿 In 链方向表现出各向异性色散，带宽约为 1eV。该能带的色散很大程度上归因于 In-s 和 Se-p 轨道的杂化，但 In-s 和 Se-p 以及 In-p 和 Se-p 轨道之间的杂化对于建立带隙也至关重要。
The ordered (100) surface of layered In4Se3 single crystals is characterized by semiconducting quasi-one-dimensional indium (In) chains. A band with significant dispersion in the plane of the surface is observed near the valence band maximum. The band exhibits an anisotropic dispersion with ∼1eV band width along the In chain direction. The dispersion of this band is largely due to the hybridization of In-s and Se-p orbitals, but the hybridization between In-s and Se-p and In-p and Se-p orbitals is also critical in establishing the band gap.