High-pressure Raman spectroscopy of graphene
High-pressure Raman spectroscopy of graphene
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DOI：
10.1103/physrevb.80.073408
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发表时间：
2009-08-01
影响因子：
3.7
通讯作者：
Halsall, Matthew P.
中科院分区：
文献类型：
--
作者：
Proctor, John E.;Gregoryanz, Eugene;Halsall, Matthew P.
原位高压拉曼光谱被用来研究单层，双层，和几层石墨烯样品支撑在硅上的金刚石对顶砧单元到3.5 GPa。结果表明，单层石墨烯在压应力作用下粘附在硅衬底上。观察到这种行为随石墨烯样品厚度变化的明显趋势。我们还研究了无支撑的石墨烯样品在金刚石对顶砧单元8 GPa，并表明，压缩下的石墨烯的性质本质上是类似于石墨。我们的结果表明，单轴和双轴应变的电子能带结构的不同影响。
In situ high-pressure Raman spectroscopy is used to study monolayer, bilayer, and few-layer graphene samples supported on silicon in a diamond anvil cell to 3.5 GPa. The results show that monolayer graphene adheres to the silicon substrate under compressive stress. A clear trend in this behavior as a function of graphene sample thickness is observed. We also study unsupported graphene samples in a diamond anvil cell to 8 GPa and show that the properties of graphene under compression are intrinsically similar to graphite. Our results demonstrate the differing effects of uniaxial and biaxial strain on the electronic band structure.