A Monolithic Active Pixel Sensor for ionizing radiation using a 180 nm HV-SOI process
A Monolithic Active Pixel Sensor for ionizing radiation using a 180 nm HV-SOI process
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DOI：
10.1016/j.nima.2015.02.052
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发表时间：
2014-12
影响因子：
1.4
通讯作者：
T. Hemperek;T. Kishishita;H. Kruger;N. Wermes
中科院分区：
文献类型：
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作者：
T. Hemperek;T. Kishishita;H. Kruger;N. Wermes
提出了一种基于厚膜高压SOI（HV-SOI）技术的改进型SOI-MAPS（Silicon On Insulator Monolithic Active Pixel Sensor）电离辐射传感器。类似于现有的基于全耗尽SOI（FD-SOI）的MAPS，掩埋氧化硅间电介质（BOX）层用于将CMOS电子器件与用作耗尽电荷收集层的处理晶片分离。FD-SOI MAPS会受到辐射损伤，例如由于氧化层中的电荷陷阱和氧化硅边界处产生的电荷态（背栅效应）而导致的晶体管阈值电压漂移。X-FAB 180 nm HV-SOI技术通过BOX层和有源电路之间的深度非耗尽注入提供了额外的隔离，从而缓解了这一问题。因此，我们在这项技术中看到了实现具有快速电荷收集特性的耐辐射MAPS的高潜力。第一个原型的设计和测量结果，包括中子辐照样品中的电荷收集。
An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-film High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer. FD-SOI MAPS suffers from radiation damage such as transistor threshold voltage shifts due to charge traps in the oxide layers and charge states created at the silicon oxide boundaries (back gate effect). The X-FAB 180-nm HV-SOI technology offers an additional isolation by deep non-depleted implant between the BOX layer and the active circuitry which mitigates this problem. Therefore we see in this technology a high potential to implement radiation-tolerant MAPS with fast charge collection property. The design and measurement results from a first prototype are presented including charge collection in neutron irradiated samples.