Control Of Single-Electron Device Using Environmental Impedance Modulation
Control Of Single-Electron Device Using Environmental Impedance Modulation
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利用环境阻抗调制控制单电子器件
DOI：
10.1143/jjap.38.2812
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
K. Gamo
中科院分区：
文献类型：
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作者：
F. Wakaya;F. Yoshioka;S. Iwabuchi;Y. Nagaoka;K. Gamo
研究了具有可变环境阻抗的单电子隧穿（SET）器件。自洽数值计算表明，电阻性环境阻抗可以控制SET器件。实验结果表明，随着环境阻抗的增大，库仑隙也随之变宽，与计算结果一致。通过对库仑金刚石形状的讨论，得出了观察到的库仑隙的扩大是由于库仑封锁的电磁环境效应造成的。
A single-electron-tunneling (SET) device with variable environmental impedance is investigated. A self-consistent numerical calculation shows that the resistive environmental impedance can control the SET device. It is experimentally observed that the Coulomb gap becomes wider as the resistive environmental impedance becomes larger as predicted by the calculation. From discussion of the shape of the Coulomb diamond, it is concluded that the observed enlargement of the Coulomb gap is due to the electromagnetic environment effect of the Coulomb blockade.
S.Iwabuchi：“具有外部电路的超小型双隧道结的库仑封锁”（1994）
DOI：
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