Measuring linear polarization of photoluminescence and photoluminescence excitation using a photoelastic modulation technique
Measuring linear polarization of photoluminescence and photoluminescence excitation using a photoelastic modulation technique
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使用光弹性调制技术测量光致发光和光致发光激发的线性偏振
DOI：
10.1063/1.351096
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发表时间：
1992
期刊：
影响因子：
--
通讯作者：
J. Merz
中科院分区：
文献类型：
--
作者：
M. Wassermeier;H. Weman;M. Miller;P. Petroff;J. Merz
利用偏振调制技术研究了GaAs/AlGaAs量子线阵列低温光致发光（PL）和光致发光激发（PLE）中的偏振依赖关系。介绍了采用光弹性调制器的调制技术，并介绍了其在PL和PLE实验装置中的实现。在PL实验中，该技术用于分析发射光的偏振，而对于PLE实验，激发光的偏振被调制，探测光吸收的偏振依赖性。由于光的调制仅限于偏振，偏振依赖性可以与PL或PLE强度同时测量。通过分子束外延在砷化镓相邻（100）表面生长的量子线样品上获得的偏振PL和PLE的结果表明，该技术的通用性和灵敏度表明，PL和PLE的线性极化都具有相当大的各向异性。利用偏振调制技术研究了GaAs/AlGaAs量子线阵列低温光致发光（PL）和光致发光激发（PLE）中的偏振依赖关系。介绍了采用光弹性调制器的调制技术，并介绍了其在PL和PLE实验装置中的实现。在PL实验中，该技术用于分析发射光的偏振，而对于PLE实验，激发光的偏振被调制，探测光吸收的偏振依赖性。由于光的调制仅限于偏振，偏振依赖性可以与PL或PLE强度同时测量。利用分子束外延技术在砷化镓相邻（100）表面生长的量子线样品上获得偏振PL和PLE的结果表明，该技术的通用性和灵敏度得到了证明。
Polarization modulation is used to investigate the polarization dependencies in the low‐temperature photoluminescence (PL) and the photoluminescence excitation (PLE) of GaAs/AlGaAs quantum wire arrays. The modulation technique employing a photoelastic modulator is described and its implementation in the experimental setup of the PL and PLE experiments is presented. In the PL experiment the technique is used to analyze the emitted light with respect to its polarization, whereas for the PLE experiment the polarization of the exciting light is modulated, probing the polarization dependence of the absorption of the light. Since the modulation of the light is restricted to the polarization, the polarization dependence can be measured simultaneously with the PL or PLE intensity. The versatility and the sensitivity of the technique is exemplified by presenting results of polarized PL and PLE obtained on quantum wire samples grown on the vicinal (100) surface of GaAs by molecular‐beam epitaxy that show a considerable anisotropy in the linear polarization for both the PL and PLE.Polarization modulation is used to investigate the polarization dependencies in the low‐temperature photoluminescence (PL) and the photoluminescence excitation (PLE) of GaAs/AlGaAs quantum wire arrays. The modulation technique employing a photoelastic modulator is described and its implementation in the experimental setup of the PL and PLE experiments is presented. In the PL experiment the technique is used to analyze the emitted light with respect to its polarization, whereas for the PLE experiment the polarization of the exciting light is modulated, probing the polarization dependence of the absorption of the light. Since the modulation of the light is restricted to the polarization, the polarization dependence can be measured simultaneously with the PL or PLE intensity. The versatility and the sensitivity of the technique is exemplified by presenting results of polarized PL and PLE obtained on quantum wire samples grown on the vicinal (100) surface of GaAs by molecular‐beam epitaxy that show a consider...