Compositional effects on radiation tolerance of amorphous silicon oxycarbide
Compositional effects on radiation tolerance of amorphous silicon oxycarbide
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DOI：
10.1016/j.jnucmat.2019.03.012
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发表时间：
2019-05
影响因子：
3.1
通讯作者：
Shoki Mizuguchi;Shinsuke Inoue;M. Ishimaru;Qing Su;M. Nastasi
中科院分区：
文献类型：
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作者：
Shoki Mizuguchi;Shinsuke Inoue;M. Ishimaru;Qing Su;M. Nastasi
用透射电子显微镜和原子对分布函数研究了SiO_2：SiC_2： = 为2：1(富SiO_2)、1：1(等原子)和1：2(富碳化硅)三种不同组成的SiOC玻璃的非晶结构与抗辐射性能的关系。这些样品在室温下被120 keV氦(He)离子辐照。PDF结果表明，在辐照和注入区，SiOC合金的结构基本相同。结果表明，富SiO_2样品表现出比富Si_2样品更强的抗辐照性能：即使在90 at.%He注入后，富SiO_2和等原子成分样品中的He气泡的形成也被高度抑制，而在富SiO_2样品中却发生了明显的膨胀。第一个尖锐的衍射峰表明，在富SiO_2和等原子样品中，通过连接SiOxC4-x四面体形成的网络空洞的尺寸远远大于He原子的直径，这表明He原子可以很容易地在无定形的SiOC网络中迁移。
Relationships between amorphous structures and radiation tolerance of silicon oxycarbide (SiOC) glasses with different composition, SiO2:SiC = 2:1 (SiO2-rich), 1:1 (equiatomic), and 1:2 (SiC-rich), were examined by transmission electron microscopy and atomic pair-distribution function (PDF). These specimens were irradiated with 120 keV helium (He) ions at room temperature. The PDF results indicated that the structure of SiOC alloys are almost the same in irradiation and implantation regions. It was found that SiO2-rich specimens show a greater radiation resistance than SiC-rich ones: the formation of He bubbles was highly suppressed in the SiO2-rich and equiatomic compositions after even 90 at.% He implantation, whereas pronounced swelling occurred in the SiC-rich composition. The first sharp diffraction peak revealed that the size of network voids formed by connecting the SiOxC4-xtetrahedra in SiO2-rich and equiatomic specimens is much larger than the diameter of He atom, suggesting that He atoms can easily migrate in the amorphous SiOC networks.