Growth of single-crystalline rutileTiO2 nanorod arrays on GaN light-emitting diodes with enhanced light extraction
Growth of single-crystalline rutileTiO2 nanorod arrays on GaN light-emitting diodes with enhanced light extraction
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DOI：
10.1039/c2jm14369k
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发表时间：
2012-02
影响因子：
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通讯作者：
Xiaoyan Liu;Weijia Zhou;Zhengmao Yin;Xiaopeng Hao;Yongzhong Wu;Xiangang Xu
中科院分区：
文献类型：
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作者：
Xiaoyan Liu;Weijia Zhou;Zhengmao Yin;Xiaopeng Hao;Yongzhong Wu;Xiangang Xu
TiO2是一种宽禁带半导体，在光伏电池和光催化中有着重要的应用。本文采用酸水热法制备了单晶金红石型TiO2纳米棒阵列，并在GaN基发光二极管（led）上添加了TiO2种子层。采用扫描电镜、高分辨率透射电镜和x射线衍射对GaN晶圆上金红石型tio2纳米棒阵列的形貌和结晶度进行了表征。采用光致发光的方法对表面织构的TiO2/GaN的光学性质进行了测量和分析。研究了不同密度和直径的TiO2纳米棒阵列对GaN晶圆光输出的影响和依赖关系。单晶金红石tio2纳米棒阵列提高了GaN led的光提取效率，其光致发光强度比普通平面提高了8倍。讨论了单晶金红石纳米棒阵列增强GaN led光输出的机理。
TiO2 is a wide band gap semiconductor with important applications in photovoltaic cells and photocatalysis. In this paper, single-crystalline rutileTiO2 nanorod arrays were fabricated on the GaN based light emitting diodes (LEDs) with a TiO2 seed layer by an acid hydrothermal process. The morphologies and the crystallinity of the rutileTiO2 nanorod arrays on GaN wafer were characterized by scanning electron microscopy, high-resolution transmission electron microscopy and X-ray diffraction. The optical properties of surface-textured TiO2/GaN were measured and analyzed by photoluminescence. The influence and dependence of the TiO2 nanorod array with the different densities and diameters on the light output of the fabricated GaN wafers were investigated. The light extraction efficiency of GaN LEDs was enhanced by the single-crystalline rutileTiO2 nanorod array, which showed an eight-fold increase in photoluminescence intensity compared to the normal planar surface. The mechanisms for the enhanced light output of GaN LEDs by the single-crystalline rutileTiO2 nanorod arrays were discussed.