TEMPERATURE-DEPENDENCE OF BAND-GAP CHANGE IN INN AND ALN
TEMPERATURE-DEPENDENCE OF BAND-GAP CHANGE IN INN AND ALN
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DOI：
10.1143/jjap.33.2453
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发表时间：
1994-05-01
期刊：
影响因子：
--
通讯作者：
YOSHIDA, A
中科院分区：
文献类型：
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作者：
GUO, QX;YOSHIDA, A
采用金属有机气相外延技术在(0001)α-Al_2O_3衬底上生长了InN和AlN单晶薄膜，通过吸收光谱测量了薄膜的光学带隙。将Varshni方程和玻色-爱因斯坦公式与实验结果进行了比较。氮化物III-V化合物半导体的禁带宽度随温度的变化较小。在III-V化合物半导体中，禁带宽度的变化按N、P、As的顺序增加。
The optical band gap of InN and AlN single crystal films was measured through absorption spectra in the temperature range of 4.2 to 300 K. The samples were grown on (0001)alpha-Al2O3 substrates by metalorganic vapor phase epitaxy. The Varshni equation and the Bose-Einstein expression have been compared with the experimental results. The nitride III-V compound semiconductors have smaller temperature dependence of band gap change. In III-V compound semiconductors, the variation of the band gap change increases in the order of N, P and As.