Determining Junction Temperature in InGaN Light-Emitting Diodes Using Low Forward Currents
Determining Junction Temperature in InGaN Light-Emitting Diodes Using Low Forward Currents
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DOI：
10.1109/ted.2013.2280644
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发表时间：
2013-09
影响因子：
3.1
通讯作者：
Siqi Lin;T. Shih;Yijun Lu;Yulin Gao;Lihong Zhu;Guolong Chen;Biqing Wu;Ziquan Guo;Jihong Zhang-Jihong-Z
中科院分区：
文献类型：
--
作者：
Siqi Lin;T. Shih;Yijun Lu;Yulin Gao;Lihong Zhu;Guolong Chen;Biqing Wu;Ziquan Guo;Jihong Zhang-Jihong-Z
我们提出了一种实验方法，确定在发光二极管的结温测量电流，同时保持低正向电压恒定。在此过程中，我们首先在可忽略热产生的条件下校准电流-温度关系参数。与两个参数值之一，我们发现存在一个正向电压峰值，产生最灵敏的测量结温。结果表明，算法电流与温度倒数近似呈线性关系，测试精度高。
We propose an experimental method that determines junction temperatures in light-emitting diodes by measuring currents while holding the low forward voltages constant. In this procedure, we first calibrate current-temperature-rela- tionship parameters under the condition of negligible thermal generation. With one of the two parametric values, we discover the existence of a forward voltage peak that yields most sensitive measurements of the junction temperature. Results show a nearly linear relationship between the algorithmic currents and temperature reciprocals with high testing precision.