Monolithic Integration of CMOS Temperature Control Circuit and Si3N4 Microring Filters for Wavelength Stabilization Within Ultra Wide Operating Temperature Range
Monolithic Integration of CMOS Temperature Control Circuit and Si3N4 Microring Filters for Wavelength Stabilization Within Ultra Wide Operating Temperature Range
复制标题
CMOS 温度控制电路和 Si3N4 微环滤波器的单片集成，可在超宽工作温度范围内实现波长稳定
DOI：
10.1109/jstqe.2019.2936937
复制
发表时间：
2020
影响因子：
4.9
通讯作者：
Chen Hongda
中科院分区：
文献类型：
--
作者：
Zhang Huan;Huang Beiju;Zhang Zan;Cheng Chuantong;Zhang Zanyun;Zhang Hengjie;Min Chengyu;Chen Run;Chen Hongda
微带谐振器因其体积小、功耗低而广泛应用于有源和无源器件中.然而，实现谐振波长的稳定性的精确控制是非常具有挑战性的，因为微晶体对制造缺陷和温度变化非常敏感。本文提出并论证了一种将互补金属氧化物半导体（CMOS）温度控制电路和Si_3N_4微结构滤波器单片集成的谐振波长稳定化新方法。通过CMOS后端工艺，在CMOS电路芯片的垂直上方形成Si 3 N4光子层。由于自动温度控制，集成的Si 3 N4微孔过滤器几乎不受环境温度变化的影响。在30 °C ~ 65 °C的环境温度调谐范围内，随温度变化的波长漂移（TDWS）从21.43 pm/° C减小到1.43 pm/°C。
Microring resonators are widely used for both active and passive devices for their small footprint and low- power consumption. However, it is very challenging to achieve precise control of stability of the resonant wavelength, as the microring is very sensitive to fabrication imperfections and temperature variations. In this paper, we propose and demonstrate a new method of monolithic integration of complementary metal-oxide-semiconductor (CMOS) temperature control circuit and Si3N4 microring filters for resonant wavelength stabilization. Through CMOS back-end process, Si3N4 photonic layer is formed vertically above the CMOS circuit chip. Due to the automatic temperature control, the integrated Si3N4 microring filters are almost immune to environment temperature change. The temperature-dependent wavelength shift (TDWS) is decreased from 21.43 pm/°C to 1.43 pm/°C with the environment temperature tuning range from 30 °C to 65 °C.