Wafer Scale Growth and Characterization of Edge Specific Graphene Nanoribbons for Nanoelectronics
Wafer Scale Growth and Characterization of Edge Specific Graphene Nanoribbons for Nanoelectronics
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DOI：
10.1021/acsanm.8b01780
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发表时间：
2018-09
影响因子：
5.9
通讯作者：
A. Zakharov;N. Vinogradov;J. Aprojanz;Thi Thuy Nhung Nguyen;C. Tegenkamp;C. Struzzi;T. Iakimov;R. Yakimova;V. Jokubavičius
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文献类型：
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作者：
A. Zakharov;N. Vinogradov;J. Aprojanz;Thi Thuy Nhung Nguyen;C. Tegenkamp;C. Struzzi;T. Iakimov;R. Yakimova;V. Jokubavičius
在场效应晶体管中使用石墨烯的方法之一是通过量子约束效应[1]引入带隙。这就是为什么宽度小于50纳米的窄石墨烯纳米带（gnr）被认为是未来石墨烯电子产品的重要组成部分。利用可扩展光刻技术在SiC（0001）台面结构的侧壁上生长石墨烯，可以生产出具有优异输运性能的高质量GNR[2-7]。这种外延石墨烯纳米带在基础科学中非常重要，但如果要将GNR用于先进的纳米电子学，则需要大规模生产高质量的薄（<50nm）纳米带。在这里，我们提出了一种在SiC（0001）的Si-face上可扩展的高质量GNR模板生长技术，并提供了详细的结构信息以及输运性质。我们成功地沿[1-100]和[11-20]两个晶体学方向生长了GNR。通过高分辨率STM、暗场LEEM和输运测量等综合表征，证实了纳米带的质量。
One of the ways to use graphene in field effect transistors is to introduce a band gap by quantum confinement effect [1]. That is why narrow graphene nanoribbons (GNRs) with width less than 50nm are considered to be essential components in future graphene electronics. The growth of graphene on sidewalls of SiC(0001) mesa structures using scalable photolithography was shown to produce high quality GNR with excellent transport properties [2-7]. Such epitaxial graphene nanoribbons are very important in fundamental science but if GNR are supposed to be used in advanced nanoelectronics, high quality thin (<50nm) nanoribbons should be produced on a large (wafer) scale. Here we present a technique for scalable template growth of high quality GNR on Si-face of SiC(0001) and provide detailed structural information along with transport properties. We succeeded to grow GNR along both [1-100] and [11-20] crystallographic directions. The quality of the grown nanoribbons was confirmed by comprehensive characterization with high resolution STM, dark field LEEM and transport measurements.