Gauge Factor Enhancement Driven by Heterogeneity in Thick-film Resistors
Gauge Factor Enhancement Driven by Heterogeneity in Thick-film Resistors
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DOI：
10.1063/1.1376672
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发表时间：
2000-10
影响因子：
3.2
通讯作者：
C. Grimaldi;P. Ryser;S. Straessler
中科院分区：
文献类型：
--
作者：
C. Grimaldi;P. Ryser;S. Straessler
我们提出了一个简单的图片，在高度异质材料，如厚膜电阻的规范因子（GF）增强。我们表明，当导电相比绝缘相更硬时，后者内的局部应变相对于平均宏观应变会增强。在一个简单的电子隧穿过程的模型，我们表明，增强的局部应变导致的GF值高于预期的均匀系统。此外，我们提供的公式有关的增强GF厚膜电阻器的弹性和微结构特性。
We present a simple picture of the gauge factor (GF) enhancement in highly heterogeneous materials such as thick-film resistors. We show that when the conducting phase is stiffer than the insulating one, the local strains within the latter are enhanced with respect to the averaged macroscopic strain. Within a simple model of electron tunneling processes, we show that the enhanced local strain leads to values of GF higher than those expected for a homogeneous system. Moreover, we provide formulas relating the enhancement of GF to the elastic and microstructural characteristics of thick-film resistors.