Observation of lasing from vertically self-organized InAs three-dimensional island quantum boxes on GaAs (001)
Observation of lasing from vertically self-organized InAs three-dimensional island quantum boxes on GaAs (001)
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GaAs 上垂直自组织 InAs 三维岛量子盒发射激光的观测 (001)
DOI：
10.1109/68.508705
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发表时间：
1996
影响因子：
2.6
通讯作者：
A. Madhukar
中科院分区：
文献类型：
--
作者：
Q. Xie;A. Kalburge;P. Chen;A. Madhukar
我们报告了首次观察到通过在 GaAs (001) 衬底上分子束外延生长的垂直自组织多层电子解耦 InAs 三维岛量子盒产生的激光。对于对应于 2 ML InAs 沉积的五组岛的堆叠，在 79 K 下发现了 310 A/cm/sup 2/ 的低阈值电流密度，这些岛被通过迁移增强外延生长的 36 个单层 GaAs 间隔物分隔开。正如预期的那样，岛体积的分布（1.5/spl times/10/sup 5/ /spl Aring//sup 3/-4 /spl times/10/sup 5/ /spl Aring//sup 3/）给出了 980 mm 和 996 nm 之间的大量激光线。
We report the first observation of lasing from vertically self-organized multiple stacks of electronically uncoupled InAs three-dimensional island quantum boxes grown via molecular beam epitaxy on GaAs (001) substrates. A low-threshold current density of 310 A/cm/sup 2/ at 79 K is found for a stack of five sets of islands corresponding to 2 ML InAs depositions separated by 36 monolayer GaAs spacers grown via migration enhanced epitaxy. The distribution of the island volumes (1.5/spl times/10/sup 5/ /spl Aring//sup 3/-4 /spl times/10/sup 5/ /spl Aring//sup 3/) gives, as expected, a multitude of laser lines between 980 mm and 996 nm.
影响因子：
4
作者：
ARAKAWA, Y;SAKAKI, H
通讯作者：
SAKAKI, H