High performance waveguide uni-travelling carrier photodiode grown by solid source molecular beam epitaxy.
High performance waveguide uni-travelling carrier photodiode grown by solid source molecular beam epitaxy.
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采用固源分子束外延生长的高性能波导单行载流子光电二极管。
DOI：
10.1364/oe.27.037065
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发表时间：
2019
期刊：
影响因子：
3.8
通讯作者：
A. Seeds
中科院分区：
文献类型：
--
作者：
Xiaoli Lin;M. Natrella;J. Seddon;C. Graham;C. Renaud;M. Tang;Jiang Wu;Huiyun Liu;A. Seeds
报道了用固体源分子束外延(SSMBE)生长的第一个波导耦合磷化物基UTC光电二极管。金属有机气相外延(MOVPE)和气源分子束外延(GSMBE)一直是制备高质量InGaAsP材料的主要生长技术。SSMBE的使用克服了与锌在MOVPE中无意扩散有关的主要问题，并提供了MBE生长技术所提供的卓越控制的好处，而无需承担GSMBE处理有毒气体的成本和风险。UTC外延结构包括300 nm的n-InP收集层和300 nm的n++-InGaAsP波导层。与共面波导(CPW)集成的UTC-PD在100 GHz时具有大于65 GHz的3dB带宽和1.1dBm的输出功率。我们还使用3D全波建模并考虑了UTC与天线之间的阻抗匹配，对我们的天线集成UTC辐射的绝对功率水平进行了准确预测，范围在200 GHz到260 GHz之间。此外，我们提出了第一个波导UTC的光学3D全波模型，它提供了对透镜光纤和UTC芯片之间的耦合的详细了解。
The first waveguide coupled phosphide-based UTC photodiodes grown by Solid Source Molecular Beam Epitaxy (SSMBE) are reported in this paper. Metal Organic Vapour Phase Epitaxy (MOVPE) and Gas Source MBE (GSMBE) have long been the predominant growth techniques for the production of high quality InGaAsP materials. The use of SSMBE overcomes the major issue associated with the unintentional diffusion of zinc in MOVPE and gives the benefit of the superior control provided by MBE growth techniques without the costs and the risks of handling toxic gases of GSMBE. The UTC epitaxial structure contains a 300 nm n-InP collection layer and a 300 nm n++-InGaAsP waveguide layer. UTC-PDs integrated with Coplanar Waveguides (CPW) exhibit 3 dB bandwidth greater than 65 GHz and output RF power of 1.1 dBm at 100 GHz. We also demonstrate accurate prediction of the absolute level of power radiated by our antenna integrated UTCs, between 200 GHz and 260 GHz, using 3d full-wave modelling and taking the UTC-to-antenna impedance match into account. Further, we present the first optical 3d full-wave modelling of waveguide UTCs, which provides a detailed insight into the coupling between a lensed optical fibre and the UTC chip.
DOI：
10.1109/jstqe.2009.2013183
发表时间：
2009-05-01
影响因子：
4.9
作者：
Belkin, Mikhail A.;Wang, Qi Jie;Capasso, Federico
通讯作者：
Capasso, Federico