Surface Potential Control of an Insulator Layer for the High Performance Organic FET
Surface Potential Control of an Insulator Layer for the High Performance Organic FET
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DOI：
10.1016/s0379-6779(02)00958-x
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发表时间：
2003-04
期刊：
影响因子：
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通讯作者：
M. Yoshida;S. Uemura;T. Kodzasa;T. Kamata;M. Matsuzawa;T. Kawai
中科院分区：
文献类型：
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作者：
M. Yoshida;S. Uemura;T. Kodzasa;T. Kamata;M. Matsuzawa;T. Kawai
结果表明，在沟道区附近并五苯晶体的生长是决定并五苯FET性能的最重要因素，并五苯晶体的生长强烈地依赖于衬底的表面能。本文研究了几种聚合物对SiO2/Si衬底的表面改性效果，以达到控制表面电位，改善FET性能的目的。使用聚合物表面改性剂匹配绝缘体和半导体层之间的表面能，改善了并五苯晶体的生长及其FET性能。结果表明，分子在固体基质上的扩散和晶体生长机制是产生这种效应的关键。
It has been indicated that the pentacene crystal growth near the channel region is the most essential factor for determining pentacene FET properties and strongly depends on the surface energy of the substrate. In this study, surface modification effect of the SiO 2/Si substrate by several kinds of polymers was investigated for the purpose of controlling surface potential and improve the FET properties. Matching the surface energy between the insulator and semiconductor layers using a polymer surface modifier gave improvement of the pentacene crystal growth and its FET properties. It was revealed that the molecular diffusion on a solid substrate and crystal growth mechanism were essential to give the effects.