Electron transport characteristics of one-dimensional heterojunctions with multi-nitrogen-doped capped carbon nanotubes.
Electron transport characteristics of one-dimensional heterojunctions with multi-nitrogen-doped capped carbon nanotubes.
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DOI：
10.1039/c0nr00411a
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发表时间：
2010-12
期刊：
影响因子：
6.7
通讯作者：
Sang Uck Lee;H. Mizuseki;Y. Kawazoe
中科院分区：
文献类型：
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作者：
Sang Uck Lee;H. Mizuseki;Y. Kawazoe
我们系统地分析了两个多氮掺杂(多氮掺杂)封顶碳纳米管在不同氮原子数和不同构象下面对面的一维异质结的电子输运特性。我们的结果表明，氮掺杂对分子轨道的修饰在所设计的异质结中产生了导电沟道，导致了具有顺序负微分电阻(NDR)的多重开关行为。NdR行为与掺杂氮原子的掺杂位置和构象密切相关。此外，我们通过施加偏压下左电极和右电极的HOMO和LUMO过滤能级的刚性位移模型，对NDR行为提供了清晰的解释。我们相信，我们的结果将为基于碳纳米管的各种电子逻辑功能的设计和实现在纳米电子学领域的应用提供一个深入的见解。
We present a systematic analysis of electron transport characteristics for one-dimensional heterojunctions with two multi-nitrogen-doped (multi-N-doped) capped carbon nanotubes (CNTs) facing one another at different numbers of nitrogen atoms and conformations. Our results show that the modification of the molecular orbitals by the nitrogen dopants generates conducting channels in the designed heterojunctions inducing multi-switching behavior with sequential negative differential resistance (NDR). The NDR behavior significantly depends on the doping site and conformation of doped nitrogen atoms. Furthermore, we provide a clear interpretation for the NDR behavior by a rigid shift model of the HOMO- and LUMO-filtered energy levels in the left and right electrodes under the applied biases. We believe that our results will give an insight into the design and implementation of various electronic logic functions based on CNTs for applications in the field of nanoelectronics.