Pump probe measurement of electron spin relaxation time in (110)-oriented GaAs/AlGaAs multiple quantum well microposts
Pump probe measurement of electron spin relaxation time in (110)-oriented GaAs/AlGaAs multiple quantum well microposts
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(110) 取向 GaAs/AlGaAs 多量子阱微柱中电子自旋弛豫时间的泵浦探针测量
DOI：
10.1143/apex.5.122401
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发表时间：
2012
影响因子：
2.3
通讯作者：
and H.Kawaguchi
中科院分区：
文献类型：
--
作者：
N. Yokota;Y. Tsunemi;K. Ikeda;and H.Kawaguchi
我们测量了电子自旋弛豫时间τ年代(110)(砷化镓/ AlGaAs多个量子阱microposts使用泵探测器技术的时间分辨率1.3 ps。长时间τs 0.74 ns得到即使是0.5µm帖子中承运人一生τc是大大缩短27 ps。这样长τs和短τc是适合快速切换垂直腔面发射激光器的激光圆偏振(VCSELs)。我们的速率方程分析表明，测量中获得的τ s远长于τ c，并不限制(110)-VCSELs中激光圆偏振的开关速度。
We measured the electron spin relaxation time τ s in (110)-oriented GaAs/AlGaAs multiple quantum well microposts using a pump probe technique with a time resolution of 1.3 ps. A long τ s of 0.74 ns was obtained even for 0.5 µm posts in which the carrier lifetime τ c was drastically shortened to 27 ps. Such long τ s and short τ c are suitable for fast switching of lasing circular polarizations in vertical-cavity surface-emitting lasers (VCSELs). Our rate equation analysis revealed that a τ s much longer than the τ c obtained in the measurement does not limit the switching speed of lasing circular polarizations in (110)-VCSELs.