Large, low‐voltage absorption changes and absorption bistability in GaAs/AlGaAs/InGaAs asymmetric quantum wells
Large, low‐voltage absorption changes and absorption bistability in GaAs/AlGaAs/InGaAs asymmetric quantum wells
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GaAs/AlGaAs/InGaAs 不对称量子阱中大的低电压吸收变化和吸收双稳态
DOI：
10.1063/1.354756
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发表时间：
1993
影响因子：
3.2
通讯作者：
J. Harris
中科院分区：
文献类型：
--
作者：
J. Trezza;M. Larson;S. Lord;J. Harris
三阶非对称耦合量子威尔斯阱具有独特的激子性质，特别是在偏压下。我们通过量子阱光调制器中吸收的变化证明了这些性质。样品由具有20个耦合威尔斯的有源区的p-i-n二极管组成，每个耦合阱包含50 A GaAs阱和20 A In0.2Ga0.8As阱，由10 A Al0.33Ga0.67As势垒分隔。结构分析表明，通过激子吸收峰的相应增加或减少，可以观察到场诱导的电子和空穴包络波函数重叠的增强和抑制。我们的器件显示出对电子重空穴1激子的偏压抑制吸收和对电子重空穴2激子的偏压增强吸收。还观察到对电子光空穴1激子的应力相关效应。每施加偏压的吸收变化比利用常规量子阱的量子阱器件中的零场激子波长低五倍。
Three‐step asymmetric coupled quantum wells have unique excitonic properties, particularly under bias. We demonstrate these properties through the absorption changes in quantum well optical modulators. The samples consisted of p‐i‐n diodes with an active region of 20 coupled wells, each coupled well containing a 50 A GaAs well and a 20 A In0.2Ga0.8As well separated by a 10 A Al0.33Ga0.67As barrier. Analysis of the structure shows that field‐induced enhancement and suppression of electron and hole envelope wave function overlap can be observed through a corresponding increase or decrease in exciton absorption peaks. Our devices showed suppressed absorption with bias for the electron‐heavy hole 1 exciton and enhanced absorption with bias for the electron‐heavy hole 2 exciton. Stress‐related effects on the electron‐light hole 1 exciton are also observed. Absorption change per applied bias is five times lower than at the zero‐field exciton wavelength in quantum well devices utilizing the conventional quantum‐...