Pulse electro-deposition of copper on molybdenum for Cu(In,Ga)Se2 and Cu2ZnSnSe4 solar cell applications
Pulse electro-deposition of copper on molybdenum for Cu(In,Ga)Se2 and Cu2ZnSnSe4 solar cell applications
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DOI：
10.1016/j.jpowsour.2016.07.005
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发表时间：
2016-09
影响因子：
9.2
通讯作者：
Jinlian Bi;L. Yao;J. Ao;Shoushuai Gao;Guozhong Sun;Q. He;Zhi-qiang Zhou;Yun Sun;Yi Zhang
中科院分区：
文献类型：
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作者：
Jinlian Bi;L. Yao;J. Ao;Shoushuai Gao;Guozhong Sun;Q. He;Zhi-qiang Zhou;Yun Sun;Yi Zhang
电沉积工艺中存在的铜层表面粗糙和添加剂问题是提高Cu（In，Ga）Se 2（CIGSe）和Cu 2 ZnSnSe 4（CZTSe）太阳能电池效率的主要障碍之一。本文采用脉冲电流电沉积方法，在无添加剂的硫酸铜溶液中，在钼基体上制备了光滑的存款铜薄膜。高阴极极化成功地减小了沉积Cu膜的晶粒尺寸。通过调节脉冲频率，成功地控制了高脉冲电流密度引起的浓差极化。当脉冲电流密度为62.5mA cm-2、脉冲频率为100，000 Hz、占空比为25%时，沉积具有光滑表面和致密结构的平坦Cu膜。采用脉冲电流法电沉积金属叠层，通过硒化处理制备了表面平整、元素分布均匀的CIGSe和CZTSe吸收膜。最后，基于光滑Cu膜制备的CIGSe和CZTSe太阳能电池的转换效率分别为10.39%和7.83%，优于直流电沉积粗糙Cu膜制备的太阳能电池。
The issues of rough surface morphology and the incorporated additives of the electro-deposited Cu layers, which exists in electrodeposition-based processes, is one of the major obstacles to improve the efficiency of Cu(In,Ga)Se2(CIGSe) and Cu2ZnSnSe4(CZTSe) solar cells. In this study, the pulse current electro-deposition method is employed to deposit smooth Cu film on Mo substrate in CuSO4solution without any additives. Grain size of the deposited Cu film is decreased by high cathode polarization successfully. And the concentration polarization, which results from high pulse current density, is controlled successfully by adjusting the pulse frequency. Flat Cu film with smooth surface and compact structure is deposited as pulse current density @ 62.5 mA cm−2, pulse frequency @100,000 Hz, and duty cycle @ 25%. CIGSe and CZTSe absorber films with flat surface and uniform elemental distribution are prepared by selenizing the stacking metal layers electro-deposited by pulse current method. Finally, the CIGSe and CZTSe solar cells with conversion efficiency of 10.39% and 7.83% respectively are fabricated based on the smooth Cu films, which are better than the solar cells fabricated by the rough Cu film deposited by direct current electro-deposition method.