Topological Insulator Cell for Memory and Magnetic Sensor Applications
Topological Insulator Cell for Memory and Magnetic Sensor Applications
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DOI：
10.1143/apex.4.094201
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发表时间：
2011-09-01
影响因子：
2.3
通讯作者：
Tan, Seng Ghee
中科院分区：
文献类型：
--
作者：
Fujita, Takashi;Jalil, Mansoor Bin Abdul;Tan, Seng Ghee
我们提出了一种基于三维拓扑绝缘体磁掺杂表面的存储器件。存储在表面上的磁性信息通过量子化霍尔效应读出，其特点是拓扑不变量。因此，读出过程对器件几何形状的紊乱、变化以及写入过程中的缺陷不敏感。 (C) 2011 日本应用物理学会
We propose a memory device based on magnetically doped surfaces of three-dimensional topological insulators. Magnetic information stored on the surface is read out via the quantized Hall effect, which is characterized by a topological invariant. Consequently, the readout process is insensitive to disorder, variations in device geometry, and imperfections in the writing process. (C) 2011 The Japan Society of Applied Physics