Al-doped HfO2/In0.53Ga0.47As metal-oxide-semiconductor capacitors
Al-doped HfO2/In0.53Ga0.47As metal-oxide-semiconductor capacitors
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掺铝 HfO2/In0.53Ga0.47As 金属氧化物半导体电容器
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
S. Stemmer
中科院分区：
文献类型：
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作者：
Y. Hwang;V. Chobpattana;J. Zhang;J. Lebeau;R. Engel;S. Stemmer
在In0.53Ga0.47As通道上，通过三甲基铝TMA和三氧化二氢氧化铪HTB共沉积，制备了掺1 ~ 2%铝的氧化铪栅极电介质。结果表明，在生长过程中加入TMA可以形成光滑的非晶态薄膜，其物理厚度可以达到5nm。具有这种介质的金属氧化物半导体电容器MOSCAPs具有1 nm的等效氧化物厚度，表现出非钉住的、高效的费米能级运动和较低的界面陷阱密度，而不是通过顺序TMA/ hhtb沉积生长的具有HfO2介质的MOSCAPs。
Hafnium oxide gate dielectrics doped with a one to two percent of aluminum are grown on In0.53Ga0.47As channels by codeposition of trimethylaluminum TMA and hafnium tertbutoxide HTB. It is shown that the addition of TMA during growth allows for smooth, amorphous films that can be scaled to 5 nm physical thickness. Metal-oxide-semiconductor capacitors MOSCAPs with this dielectric have an equivalent oxide thickness of 1 nm, show an unpinned, efficient Fermi level movement and lower interface trap densities than MOSCAPs with HfO2 dielectrics grown by sequential TMA/HTB deposition.