Defect-free single-crystal Ge island arrays on insulator by rapid-melting-growth combined with seed-positioning technique
Defect-free single-crystal Ge island arrays on insulator by rapid-melting-growth combined with seed-positioning technique
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DOI：
10.1063/1.3231925
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发表时间：
2009-09
影响因子：
4
通讯作者：
K. Toko;Takashi Sakane;Takanori Tanaka;T. Sadoh;M. Miyao
中科院分区：
文献类型：
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作者：
K. Toko;Takashi Sakane;Takanori Tanaka;T. Sadoh;M. Miyao
SiO2/Si结构上的单晶Ge岛阵列是将先进的Ge器件集成到Si大规模集成电路（LSI）中所需要的。采用Ni压印诱导的Si（111）细晶（直径约为1 μm）作为生长晶种，发展了快速熔化生长非晶Ge的工艺。在SiO2/Si衬底上均匀地制备了（111）取向的单晶Ge岛阵列，器件尺寸为10 μm × 10 μm。横截面透射电子显微镜观察表明，Ge岛不包括位错或堆垛层错。该方法为实现具有多功能的混合SiGe LSI提供了可能。
Single-crystal Ge island arrays on SiO2/Si structures are desired to merge advanced Ge devices into Si large scale integrated circuit (LSI). We have developed the rapid-melting-growth process of amorphous Ge by using Ni-imprint-induced Si (111) fine crystals (∼1 μmϕ) as the growth seed. Arrays of (111) oriented single-crystal Ge islands with device size (∼10 μmϕ) are uniformly fabricated on SiO2/Si substrates. The cross-sectional transmission electron microscopy observation reveals that Ge islands include no dislocation or stacking fault. This method opens up a possibility to achieve hybrid SiGe-LSI with multifunctions.