Direct evidence of the occupied valence states for adsorbed Cs atoms on the Si(111) surface.
Direct evidence of the occupied valence states for adsorbed Cs atoms on the Si(111) surface.
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Si(111) 表面上吸附的 Cs 原子占据价态的直接证据。
DOI：
10.1103/physrevb.39.8048
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发表时间：
1989
期刊：
影响因子：
--
通讯作者：
Sasaki
中科院分区：
文献类型：
--
作者：
Nishigaki;Oishi;Matsuda;Kawanishi;Sasaki
利用亚稳态去激发谱（MDS）研究了Cs原子在Si（111）表面上的占据价带特性。MDS光谱在饱和覆盖度附近表现出明显的Cs 6s衍生能级峰结构，这与吸附的碱金属原子完全电离的概念相反。直接证据的价带电荷重新分配作为Cs覆盖的功能。
Metastable deexcitation spectroscopy (MDS) has been applied to detect occupied valence-band features for Cs atoms adsorbed on a Si (111) surface. The MDS spectrum exhibited a clear peak structure of the Cs 6s-derived level near the saturation coverage, which is contrary to the concept of full ionization of adsorbed alkali-metal atoms. Direct evidence of the valence-band charge redistribution as a function of Cs coverage is presented.