Preparation of Diamond Mold Using Electron Beam Lithography for Application to Nanoimprint Lithography
Preparation of Diamond Mold Using Electron Beam Lithography for Application to Nanoimprint Lithography
复制标题
电子束光刻制备金刚石模具并应用于纳米压印光刻
DOI：
10.1143/jjap.39.7070
复制
发表时间：
2000
影响因子：
1.5
通讯作者：
H. Ohyi
中科院分区：
文献类型：
--
作者：
J. Taniguchi;Y. Tokano;I. Miyamoto;M. Komuro;H. Hiroshima;K. Kobayashi;T. Miyazaki;H. Ohyi
金刚石模具是通过两种制造工艺制造的，这两种工艺都在钻石表面和聚甲基丙烯酸甲酯(PMMA)抗蚀剂之间使用导电中间层来防止表面荷电。利用PtPd中间层、电子束光刻和离子束刻蚀技术，制作了宽度为600 nm、深度为70 nm的压痕图形。采用碳中间层、电子束光刻、PtPd剥离和氧离子束刻蚀等工艺，制作了宽600 nm、高110 nm的凸线图形。将这些钻石模具压入硅衬底上的PMMA中，加热至150℃，并保持23.5兆帕的压力，直到温度降至90℃以下，然后将钻石模具从PMMA中释放。采用压痕金刚石模压印出了宽600 nm、高150 nm的凸线图形。用凸形金刚石模具压印出了宽1100 nm、高180 nm的凹陷图案。PMMA图案通过钻石模具在压印区域转移得很好。
Diamond molds were fabricated by two types of fabrication processes, both of which use a conductive intermediate layer between the diamond surface and polymethylmethacrylate (PMMA) resist to prevent surface charge-up. Using a PtPd intermediate layer, electron beam lithography and ion beam etching, a denting line pattern of 600 nm width and 70 nm depth was fabricated. Using a carbon intermediate layer, electron beam lithography, PtPd lift-off and oxygen ion beam etching, a convex line pattern of 600 nm width and 110 nm height was fabricated. These diamond molds were pressed into PMMA on a silicon substrate that was heated to a temperature of 150°C and kept at a pressure of 23.5 MPa until the temperature dropped below 90°C, and then the diamond mold was released from the PMMA. The convex line pattern of 600 nm width and 150 nm height was imprinted using a denting diamond mold. The denting pattern of 1100 nm width and 180 nm height was imprinted using a convex diamond mold. PMMA patterns were transferred well over the imprinted area by the diamond molds.