Domain Wall Engineering in Lead-Free Piezoelectric Materials
Domain Wall Engineering in Lead-Free Piezoelectric Materials
复制标题
DOI：
10.1080/00150190902987335
复制
发表时间：
2009-08
期刊：
影响因子：
--
通讯作者：
S. Wada;P. Pulpán
中科院分区：
文献类型：
--
作者：
S. Wada;P. Pulpán
以[110]取向的BT板状颗粒为模板，以不同粒径的水热BT球颗粒为基体，采用模板晶粒生长（TGG）方法制备了晶粒取向钛酸钡（BaTiO3，BT）陶瓷。沿着[110]方向的取向度F110是通过Lotgering方法使用X射线衍射(XRD)图来测量的。为了获得高密度和高 F110，根据基质粒径、模板相对于基质的体积分数和烧结温度对制备条件进行了优化。结果表明，尽管F110值在0%至98%之间，但仍成功制备出高密度96%以上的BT晶粒取向陶瓷。扫描电子显微镜 (SEM) 显示，尽管 F110 值不同，但它们的平均晶粒尺寸始终为 75 µm，并且不存在各向异性微观结构。这些晶粒取向 BT 陶瓷在 100 °C 下极化，并测量了它们的压电常数 d33。结果表明，d33 值随着 F110 值的增加而增加，在 F110 为 85% 左右时，d33 达到最大值 788 pC/N。
Grain-oriented barium titanate (BaTiO3, BT) ceramics were prepared by a templated grain growth (TGG) method using [110]-oriented BT platelike particles as a template and hydrothermal BT sphere particles with different particle sizes as a matrix. The degree of orientation along the [110] direction, F110, was measured using an X-ray diffraction (XRD) pattern by the Lotgering method. To obtain both a high density and a high F110, the preparation conditions were optimized as functions of matrix particle size, volume fraction of the template to the matrix, and sintering temperature. As for the results, BT grain-oriented ceramics with a high density of more than 96 % were successfully prepared despite various F110 values from 0 to 98 %. Scanning electron microscopy (SEM) revealed that their average grain sizes were always 75 µm despite various F110 values and there were no anisotropic microstructures. These grain-oriented BT ceramics were poled at 100 °C, and their piezoelectric constants d33 was measured. As for the results, the d33 values increased with increasing F110 values, and at around an F110 of 85 %, d33 reached a maximum of 788 pC/N.