Optical and electrical properties of rare earth (Yb,Er) doped GaAs grown by molecular beam epitaxy
Optical and electrical properties of rare earth (Yb,Er) doped GaAs grown by molecular beam epitaxy
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分子束外延生长稀土 (Yb,Er) 掺杂 GaAs 的光学和电学特性
DOI：
10.1063/1.356000
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发表时间：
1994
期刊：
影响因子：
--
通讯作者：
A. Guivarc’h
中科院分区：
文献类型：
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作者：
D. Seghier;T. Benyattou;A. Kalboussi;S. Monéger;G. Marrakchi;G. Guillot;B. Lambert;A. Guivarc’h
本文报道了掺铒和掺镱砷化镓的电学和光学性质。所研究的样品是半绝缘的，并通过分子束外延生长。二次离子质谱法测得GaAs外延层中Yb和Er的浓度为2-3×1017 cm−3。Yb在a - 4f壳内的光致发光尚未被观察到，而Er的光致发光已被广泛报道。光导电流瞬态光谱测量（PICTS）表明，镱掺杂（Er掺杂）在间隙中产生了一个活化能为0.65 eV （0.67 eV）的能级。这种能级的深度可能是GaAs:Yb中没有yb4f光致发光的原因。此外，光电导实验表明存在稀土相关的陷阱。这些陷阱的能量正好对应于PICTS发现的间隙能和相应活化能之间的差值。这些观测结果证实了基于重组能量转移的激励模型。
Electrical and optical properties of erbium‐doped and ytterbium‐doped GaAs are reported in this article. The studied samples are semi‐insulating and have been grown by molecular beam epitaxy. The Yb and Er concentrations in the GaAs epitaxial layers measured by secondary ion mass spectroscopy are 2–3×1017 cm−3. The photoluminescence of Yb intra‐4f shell has not been observed, while that of Er has been widely reported. Photoinduced current transient spectroscopy measurements (PICTS) reveal that the Yb doping (Er doping) creates a level in the gap with an activation energy of 0.65 eV (0.67 eV). The depth of such levels may be responsible for the absence of Yb 4f photoluminescence in GaAs:Yb. Moreover, photoconductivity experiments show the presence of rare earth related traps. The energies of these traps correspond exactly to the difference between the gap energy and the corresponding activation energy found by PICTS. These observations confirm the excitation model based on the energy transfer from recombin...