Direct writing of heterostructures in single atomically precise graphene nanoribbons
Direct writing of heterostructures in single atomically precise graphene nanoribbons
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DOI：
10.1103/physrevmaterials.3.016001
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发表时间：
2019-01-03
影响因子：
3.4
通讯作者：
Li, An-Ping
中科院分区：
文献类型：
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作者：
Ma, Chuanxu;Xiao, Zhongcan;Li, An-Ping
界面结构和电子性质的精确控制是实现功能异质结构的关键。在这里，利用扫描隧道显微镜（STM）作为操作和表征工具，我们展示了在一个原子级精确的石墨烯纳米颗粒（GNR）的异质结构的制造，并报告其电子性质。该异质结构由七碳宽的扶手椅型GNR和较低带隙的中间带组成，中间带由Au衬底上的分子前体自下而上合成。短的GNR段直接写入带与STM针尖，形成原子精度intrarithmic异质结构。基于STM研究结合密度泛函理论计算，我们表明，异质结构具有I型带对齐，量子限制和轨道杂化的表现。我们的发现证明了一种可行的策略，可以创建具有原子精度的双势垒量子点结构，用于功能，例如基于GNR的纳米电子学中的负微分电阻器件。
Precision control of interfacial structures and electronic properties is the key to the realization of functional heterostructures. Here, utilizing the scanning tunneling microscope (STM) both as a manipulation and characterization tool, we demonstrate the fabrication of a heterostructure in a single atomically precise graphene nanoribbon (GNR) and report its electronic properties. The heterostructure is made of a seven-carbon-wide armchair GNR and a lower band gap intermediate ribbon synthesized bottom-up from a molecular precursor on an Au substrate. The short GNR segments are directly written in the ribbon with a STM tip to form atomic precision intraribbon heterostructures. Based on STM studies combined with density functional theory calculations, we show that the heterostructure has a type-I band alignment, with manifestations of quantum confinement and orbital hybridization. Our finding demonstrates a feasible strategy to create a double-barrier quantum dot structure with atomic precision for functionalities, such as negative differential resistance devices in GNR-based nanoelectronics.