Enhanced linear magnetoresistance of germanium at room temperature due to surface imperfection
Enhanced linear magnetoresistance of germanium at room temperature due to surface imperfection
复制标题
由于表面缺陷，室温下锗的线性磁阻增强
DOI：
10.1063/1.4919216
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发表时间：
2015-04-27
影响因子：
4
通讯作者：
Zhang, Xiaozhong
中科院分区：
文献类型：
--
作者：
Chen, Jiaojiao;Piao, Hong-Guang;Zhang, Xiaozhong
我们报道了在室温下锗的线性磁阻增强。在低磁场(B<；0.4T)下，磁阻灵敏度可达到8T(-1)。研究发现，这种磁阻效应归因于表面缺陷，表面缺陷不仅增加了磁阻的速率，而且增强了磁阻的不均匀性。我们的工作可能会对磁场传感行业有吸引力，并使锗基磁电子学得到进一步发展。(C)2015 AIP出版有限责任公司。
We report an enhanced linear magnetoresistance in germanium at room temperature. The magnetic-field dependence shows no saturation at magnetic fields (B) up to 4 T and the magnetoresistance sensitivity at low fields (B < 0.4T) can reach similar to 8T(-1). It is found that this magnetoresistance effect is ascribed to surface imperfection, which cannot only increase the rate but also enhance the inhomogeneity. Our work may be attractive to the magnetic-field sensing industry and make germanium-based magnetoelectronics further developed. (C) 2015 AIP Publishing LLC.