Sinuous step instability on the Si(001) surface.
Sinuous step instability on the Si(001) surface.
复制标题
Si(001) 表面上的正弦阶跃不稳定性。
DOI：
10.1103/physrevlett.68.816
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发表时间：
1992
影响因子：
8.6
通讯作者：
Pehlke
中科院分区：
文献类型：
--
作者：
Tersoff;Pehlke
在切割稍有偏差的Si(001)表面上，直线台阶被预测为不稳定，不能形成长波长起伏。这些起伏实际上通过减小应力域的大小降低了能量；因此，它们类似于Alerhandd等人提出的自发台阶形成。然而，预期台阶起伏在动力学上是有利的，从而抢占自发台阶形成的先机。此外，它们还导致在小角度的表面相图中出现了意想不到的明显热力学相。
On slightly miscut Si(001) surfaces, straight steps are predicted to be unstable against the formation of long-wavelength undulations. These undulations lower the energy, by, in effect, reducing the size of the stress domains; they are thus analogous to the spontaneous step formation proposed by Alerhand et al. However, step undulations are expected to be kinetically favored, and therefore to preempt spontaneous step formation. Moreover, they lead to an unexpected distinct thermodynamic phase in the surface phase diagram at small angles.