Negative photoresists for optical lithography
Negative photoresists for optical lithography
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DOI：
10.1147/rd.411.0081
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发表时间：
1997-01-01
影响因子：
1.3
通讯作者：
Holmes, SJ
中科院分区：
文献类型：
--
作者：
Shaw, JM;Gelorme, JD;Holmes, SJ
负性光致抗蚀剂是当暴露于光辐射时变得不溶于显影溶液的材料。它们是用于图案化半导体器件的第一个系统，并且仍然包括光致抗蚀剂工业的最大部分，因为它们广泛用于限定印刷线路板中的电路。然而，目前负性抗蚀剂在半导体工业中的使用受到过去难以获得高分辨率图案的限制。负性抗蚀剂体系化学的最新进展，然而，已经提供了用于制造IBM的先进的CMOS器件和实现高纵横比的微加工应用的图案的宽加工范围和高分辨率的材料，本文提供了一个负性抗蚀剂系统的历史和化学及其在IBM的发展的概述。
Negative photoresists are materials that become insoluble in developing solutions when exposed to optical radiation, They were the first systems used to pattern semiconductor devices, and still comprise the largest segment of the photoresist industry because they are widely used to define the circuitry in printed wiring boards, However, the current use of negative resists in the semiconductor industry has been limited by past difficulties in achieving high-resolution patterns, Recent advances in the chemistry of negative-resist systems, however, have provided materials with wide processing latitude and high resolution that are used to manufacture IBM's advanced CMOS devices and to achieve high-aspect-ratio patterns for micromachining applications, This paper provides an overview of the history and chemistry of negative-resist systems and their development in IBM.