Obtaining of SmS Based Semiconducting Material and Investigation of Its Electrical Properties
Obtaining of SmS Based Semiconducting Material and Investigation of Its Electrical Properties
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SmS基半导体材料的制备及其电性能研究
DOI：
10.1134/s1063782613100126
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发表时间：
2013
期刊：
影响因子：
0.7
通讯作者：
N.Stepanov and N.Sharenkova
中科院分区：
文献类型：
--
作者：
V.Kaminskii;S.Hirai;T.Kuzuya;S.Solov’ev;N.Stepanov and N.Sharenkova
研究了三氢化钐(SmH3)与其倍半硫化物反应制得的半导体一硫化钐多晶。研究了样品电阻率和结构特征的温度、气压和频率依赖性。结果表明，SmS样品的X射线相干散射区域值极小，为320 Å；半导体-金属相变临界压力高于其他方法获得的样品，为0.88 GPa；电阻率的温度依赖性具有金属行为。发现了电子传输的跳跃机制。所有这些特征都可以通过多晶 SmS 样品的更多缺陷结构来解释。
Semiconductor samarium monosulfide polycrystals obtained by reaction between samarium trihydride (SmH3) and its sesquisulfide were studied. The temperature, baric and frequency dependences of the resistivity and structural features of the samples were investigated. It is shown that the value of X-ray coherent scattering region is extremely small for SmS samples, 320 Å; critical pressure of semiconductor-metal phase transition is higher than in the samples, obtained by other methods, 0.88 GPa; the temperature dependence of the resistivity has metallic behavior. Hopping mechanism of electron transport was found. All these features are explained by more defective structure of the polycrystalline SmS samples.