Fabrication and scanning tunneling microscopy characterization of suspended monolayer graphene on periodic Si nanopillars
Fabrication and scanning tunneling microscopy characterization of suspended monolayer graphene on periodic Si nanopillars
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DOI：
10.1063/1.4807139
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发表时间：
2013-05
影响因子：
4
通讯作者：
Xin Zhao;X. Zhai;A. Zhao;B. Wang;J. Hou
中科院分区：
文献类型：
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作者：
Xin Zhao;X. Zhai;A. Zhao;B. Wang;J. Hou
我们在周期性硅纳米结构上制备了单层石墨烯（SMG），并对其进行了扫描隧道显微镜（STM）表征。采用化学气相沉积（CVD）法在铜箔上生长单层石墨烯（MG），并将其转移到具有周期性纳米柱阵列的Si衬底上，得到部分悬浮的MG。对MG的悬浮区域进行低温STM表征，获得原子分辨率图像。SMG的扫描隧道谱在费米能级（EF）附近表现出非线性行为，这归因于电子-电子相互作用对狄拉克锥的重塑。
We present the fabrication and scanning tunneling microscopy (STM) characterization of suspended monolayer graphene (SMG) on periodic Si nanostructure. Monolayer graphene (MG) was grown on Cu foils by chemical vapor deposition (CVD) and transferred onto a Si substrate with etched array of periodic nanopillars, obtaining partly suspended MG. Low-temperature STM characterization was performed on the suspension area of the MG with atomic resolution images obtained. The scanning tunneling spectroscopy of SMG shows a nonlinear behavior near the Fermi level (EF), which is attributed to the Dirac cone reshaped by electron-electron interaction.