Effect of Ga/Cu Ratio on Polycrystalline CuGaSe2 Thin Film Solar Cell, Effect of surface structureon transformation of 4H-SiC by high-temperature annealing
Effect of Ga/Cu Ratio on Polycrystalline CuGaSe2 Thin Film Solar Cell, Effect of surface structureon transformation of 4H-SiC by high-temperature annealing
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Ga/Cu比对多晶CuGaSe2薄膜太阳能电池的影响、表面结构对4H-SiC高温退火转变的影响
DOI：
10.1143/jjap.49.101301
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
and K. Akimoto
中科院分区：
文献类型：
--
作者：
M. M. Islam;A. Yamada;T. Sakurai;S. Ishizuka;K. Matsubara;S. Niki;and K. Akimoto;Y. Kawada;T. Tawara;S. Nakamura;M. Gotoh;T. Tawara;N. Iwamura;and K. Akimoto
研究了高温退火对SiC刻蚀形貌的影响。在表面上没有硅原子的情况下，即使在1700 ℃下在纯Ar中退火后，也几乎没有发生蚀刻形状的转变，其中转变应该在没有硅原子损失的情况下发生。当SiH4加入到Ar中时，表面有向SiC转化的趋势，且随着SiH4加入量的增加，这种转化增强。因此，硅原子的存在对于改变SiC表面上的蚀刻形状是必要的。
The transformation of SiC etching shapes by high-temperature annealing has been investigated. Without silicon atoms on the surface, transformation of the etching shapes hardly occurred even after annealing in pure Ar at 1700 C, where transformation should occur without the loss of silicon atoms. When SiH 4 was added to Ar, the surface tended to revert to SiC, and the transformation was enhanced with increasing SiH 4 addition. Therefore, the presence of silicon atoms is necessary to transform the etching shapes on SiC surfaces.