Structure and properties of diamond-like carbon thin films synthesized by biased target ion beam deposition
Structure and properties of diamond-like carbon thin films synthesized by biased target ion beam deposition
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DOI：
10.1016/j.surfcoat.2013.02.019
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发表时间：
2013-05
影响因子：
5.4
通讯作者：
H. Niakan;Qiaoqin Yang;J. Szpunar
中科院分区：
文献类型：
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作者：
H. Niakan;Qiaoqin Yang;J. Szpunar
首次采用偏压靶离子束沉积（BTIBD）技术制备了无氢类金刚石（DLC）薄膜。采用原子力显微镜（AFM）、拉曼光谱、X射线光电子能谱（XPS）、纳米压痕和球盘测试等手段对薄膜的结构和性能进行了表征。在-200 ~-1000V的靶偏压范围内，研究了靶偏压对薄膜结构和性能的影响。结果表明，sp3键含量从20%增加到60%，均方根粗糙度从0.2nm减小到0.05nm，摩擦系数从0.3减小到0.06，硬度从4.5GPa增加到15 GPa，当靶偏压的绝对值从200 V增加到800 V时，薄膜的杨氏模量从65 GPa增加到170 GPa。当偏压进一步提高到-1000V时，薄膜的sp3键含量降低到44%，表面粗糙度增加到0.09nm，摩擦系数增加到0.11，硬度降低到12.9GPa，杨氏模量降低到150 GPa。结果表明，sp3键含量越高，表面粗糙度越低，摩擦系数越小，硬度和杨氏模量越高。
Biased target ion beam deposition (BTIBD) was firstly used to synthesize hydrogen free diamond-like carbon (DLC) thin films. The structure and properties of the synthesized films were characterized by atomic force microscopy (AFM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), nanoindentation, and ball-on-disk testing. The effect of target bias voltage, ranging from −200 to −1000V, on the structure and properties of the films was investigated. The results show that the sp3bonding content increases from 20% to 60%, the root-mean squared (RMS) roughness decreases from 0.2nm to 0.05nm, the coefficient of friction (COF) decreases from 0.3 to 0.06, the hardness increases from 4.5GPa to 15GPa, and the Young's modulus increases from 65GPa to 170GPa with increasing the absolute value of target bias voltage from 200V to 800V. However, when the target bias voltage further increased to −1000V, the sp3bonding content decreases to 44%, RMS roughness increases to 0.09nm, COF raises to 0.11, hardness decreases to 12.9GPa and Young's modulus is lowered to 150GPa. It has been found that the higher the fraction of sp3bonds, the lower the surface roughness and friction coefficient, and the higher the hardness and Young's modulus.