Optomechanical interactions in two-dimensional Si and GaAs phoXonic cavities
Optomechanical interactions in two-dimensional Si and GaAs phoXonic cavities
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DOI：
10.1088/0953-8984/26/1/015005
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发表时间：
2014-01
期刊：
影响因子：
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通讯作者：
S. El-Jallal;M. Oudich;Y. Pennec;B. Djafari-Rouhani;A. Makhoute;Q. Rolland;S. Dupont;J. Gazalet
中科院分区：
文献类型：
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作者：
S. El-Jallal;M. Oudich;Y. Pennec;B. Djafari-Rouhani;A. Makhoute;Q. Rolland;S. Dupont;J. Gazalet
我们从理论上研究了由硅（Si）和砷化镓（GaAs）矩阵中的方形孔阵列构成的二维无限光子晶体中产生的腔内光力学相互作用。只需在完美晶体中去掉一个孔即可获得空腔。我们的计算考虑了两种促进光力学耦合的机制，即体光弹性效应和由于声应变引起的界面变形。耦合强度是通过两种不同的方法来估计的，一种是在声波振荡的一个周期内调制光子模式频率，另一种是计算光机耦合率。我们讨论了模的对称性和简并度的重要作用，以区分哪些模不能有效地相互作用。在不同光波长的Si和GaAs晶体中进行的计算强调了光弹性对光力学相互作用的贡献作为材料和波长的函数的依赖性，特别是由于半导体带隙附近光弹性系数的显著变化。
We investigate theoretically the optomechanical interactions inside cavities created in two-dimensional infinite phoXonic crystals constituted by a square array of holes in silicon (Si) and gallium arsenide (GaAs) matrices. The cavity is simply obtained by removing one hole in the perfect crystal. Our calculations take into account two mechanisms that contribute to the optomechanical coupling, namely the bulk photoelastic effect and the deformations of the interfaces due to the acoustic strain. The coupling strength is estimated by two different methods, modulation of the photonic mode frequency during one period of the acoustic oscillations and calculation of the optomechanical coupling rate. We discuss the important roles of the symmetry and degeneracy of the modes to discriminate which ones are not able to interact efficiently. Calculations in Si and GaAs crystals at different optical wavelengths emphasize the dependence of the photoelastic contribution to the optomechanical interaction as a function of material and wavelength, especially owing to the significant variation of the photoelastic coefficients near the semiconductor band gap.