FILLING DEPENDENCE OF ELECTRONIC-PROPERTIES ON THE VERGE OF METAL MOTT-INSULATOR TRANSITIONS IN SR1-XLAXTIO3
FILLING DEPENDENCE OF ELECTRONIC-PROPERTIES ON THE VERGE OF METAL MOTT-INSULATOR TRANSITIONS IN SR1-XLAXTIO3
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DOI：
10.1103/physrevlett.70.2126
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发表时间：
1993-04-05
影响因子：
8.6
通讯作者：
IYE, Y
中科院分区：
文献类型：
--
作者：
TOKURA, Y;TAGUCHI, Y;IYE, Y
在Mott-Hubbard绝缘体LaTiO_3（3d_1组态）中引入空穴（或部分消除电子）可以通过Sr部分取代La来实现，从而产生强关联的金属相。通过测量电阻率、霍尔系数、磁化率和比热，研究了Sr 1-xLaxTiO 3电子性质随3d能带填充（x）的变化规律.直到金属-绝缘体相边界附近（x（c）类似于0.95），Sr 1-xLaxTiO 3表现为费米液体系统，其中载流子质量和散射率随着接近x = 1（LaTiO 3）绝缘体而临界增加。
Introducing holes (or partly eliminating electrons) in Mott-Hubbard insulator LaTiO3 (with 3d1 configuration) can be carried out by partial substitution of La with Sr, which produces the strongly correlated metallic phase. Systematic variation of electronic properties in Sr1-xLaxTiO3 was investigated as a function of the 3d band filling (x) by measurements of resistivity, Hall coefficient, magnetic susceptibility, and specific heat. Up to the vicinity of the metal-insulator phase boundary (x(c) is similar to 0.95), Sr1-xLaxTiO3 behaves as a Fermi liquid system where the carrier mass and scattering rate critically increase as the x = 1 (LaTiO3) insulator is approached.