Room-temperature continuous-wave operation of 1.24-/spl mu/m GaInNAs lasers grown by metal-organic chemical vapor deposition
Room-temperature continuous-wave operation of 1.24-/spl mu/m GaInNAs lasers grown by metal-organic chemical vapor deposition
复制标题
通过金属有机化学气相沉积生长的 1.24-/spl mu/m GaInNAs 激光器的室温连续波操作
DOI：
10.1109/2944.788439
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发表时间：
1999
影响因子：
4.9
通讯作者：
S. Satoh
中科院分区：
文献类型：
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作者：
S. Sato;S. Satoh
首次在金属有机物化学气相沉积生长的GaInNAs-GaAs激光器中实现了室温连续波工作。在1.245/spl μ/m的发射下，获得了660 A/cm/sup2/的低阈值电流密度和113 K的高特征温度。在GaAs衬底上的高应变GaInAs-GaAs双量子阱激光器中，通过将In含量增加到39%，也证明了在1.225/spl μ/m的最长波长处的发射。在高达1.2 μ m/s的波长范围内获得了约200 A/cm/sup 2/s的低阈值电流密度。
Room-temperature continuous-wave operation is demonstrated for the first time in a GaInNAs-GaAs laser grown by metal-organic chemical vapor deposition. A low-threshold current density of 660 A/cm/sup 2/ and a high characteristic temperature of 113 K emitting at 1.245 /spl mu/m is achieved. Emitting at the longest wavelength of 1.225 /spl mu/m is also demonstrated in a highly strained GaInAs-GaAs double-quantum-well laser on a GaAs substrate by increasing the In content up to 39%. A low-threshold current density of about 200 A/cm/sup 2/ in a wavelength range up to 1.2 /spl mu/m is achieved.
DOI：
10.1143/jjap.35.1273
发表时间：
1996-02-01
期刊：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
影响因子：
--
作者：
Kondow, M;Uomi, K;Yazawa, Y
通讯作者：
Yazawa, Y