A CMOS RF RMS detector for built-in testing of wireless transceivers

A CMOS RF RMS detector for built-in testing of wireless transceivers
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用于无线收发器内置测试的 CMOS RF RMS 检测器

DOI:
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发表时间:
2005
期刊:
IEEE VLSI Test Symposium
影响因子:
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通讯作者:
E. Sánchez
E. Sánchez
中科院分区:
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文献类型:
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作者:
A. Valdes;R. Venkatasubramanian;R. Srinivasan;J. Silva;E. Sánchez

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推出了 CMOS RF RMS 检测器。它产生与射频信号的 RMS 电压幅度成比例的直流电。其高输入阻抗和小硅面积使其适合对低噪声放大器 (LNA) 和功率放大器 (PA) 等收发器的关键 RF 模块进行内置测试 (BI​​T),而不会影响其性能,并且面积开销最小。并举例说明该结构在无线收发器故障检测与诊断中的应用。详细讨论了所提出电路的晶体管级实现。使用CMOS 0.35/spl mu/m技术的布局后仿真结果表明,该测试器件能够在2.4GHz、20dB的动态范围内执行射频到直流转换,使用的面积仅为0.0135mm/sup 2/,并具有22.5fF的等效输入电容。
A CMOS RF RMS detector is introduced. It generates a DC proportional to the RMS voltage amplitude of an RF signal. Its high input impedance and small silicon area make it suitable for the built-in testing (BIT) of critical RF blocks of a transceiver such as a low noise amplifier (LNA) and power amplifier (PA) without affecting their performance and with minimum area overhead. The use of this structure in the fault detection and diagnosis of a wireless transceiver is described and illustrated with an example. The transistor-level implementation of the proposed circuit is discussed in detail. Post-layout simulation results using CMOS 0.35/spl mu/m technology show that this testing device is able to perform an RF to DC conversion at 2.4GHz in a dynamic range of 20dB using an area of only 0.0135mm/sup 2/ and presenting an equivalent input capacitance of 22.5fF.