Excellent spin-filtering and giant tunneling magnetoresistance in a dual-electrode van der Waals magnetic tunnel junction based on ferromagnetic CrSe2
Excellent spin-filtering and giant tunneling magnetoresistance in a dual-electrode van der Waals magnetic tunnel junction based on ferromagnetic CrSe2
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基于铁磁 CrSe2 的双电极范德华磁隧道结具有出色的自旋过滤和巨隧道磁阻
DOI：
10.1016/j.apsusc.2022.155588
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发表时间：
2022-11
影响因子：
6.7
通讯作者：
Zhihong Lu
中科院分区：
文献类型：
--
作者：
Jindi Feng;Kunpeng Li;Mingkun Zheng;Wancheng Zhang;Yong Liu;Dengjing Wang;Zhenhua Zhang;Chao Zuo;Rui Xiong;Zhihong Lu
磁性隧道结（MTJ）具有高效的自旋过滤效应和大的隧道磁电阻（TMR）比，是自旋电子学领域中极具吸引力的研究对象。受最近在2 H-WSe 2衬底上通过化学气相沉积（CVD）方法成功制备稳定的二维层状铁磁体1 T-CrSe 2的启发，本文采用第一性原理计算，研究了单层2 H-WSe 2隧道势垒和1 T-CrSe 2单电极或1 T-MoSe 2/1 T-CrSe 2双电极构建的货车德瓦尔斯（vdW）MTJ的自旋相关输运性质.与单电极MTJ的低TMR（67.3%）相比，双电极MTJ具有良好的自旋过滤效应（99.96%的自旋极化）和巨大的TMR比（2.29 × 105%），这主要源于MoSe 2/CrSe 2界面电荷转移引起的CrSe 2的半金属化。相对较高的TMR值（超过1 × 103%）始终保持在小偏置电压（|VB| ≤ 0.35 V）。我们的工作首次从理论上验证了通过电极界面工程实现二维CrSe 2从金属性到半金属性的转变，并产生优异的自旋滤波和巨磁阻效应的可行性，从而为自旋电子器件中高性能vdW MTJ的实验设计提供了重要的理论指导.
Magnetic tunnel junctions (MTJs) both with efficient spin-filtering effect and large tunneling magnetoresistance (TMR) ratio are extremely attractive and highly desirable in the field of spintronics. Inspired by recent successful preparation of a stable two-dimensional (2D) layered ferromagnet 1T-CrSe2on a 2H-WSe2substrate via chemical vapor deposition (CVD) synthesis, herein, employing first-principles calculations, we investigate the spin-dependent transport properties of van der Waals (vdW) MTJs built with a monolayer 2H-WSe2tunnel barrier and a 1T-CrSe2single-electrode or a 1T-MoSe2/1T-CrSe2dual-electrode. Compared to low TMR (67.3%) in single-electrode MTJ, dual-electrode MTJ exhibits excellent spin-filtering effect (with 99.96% spin polarization) and a giant TMR ratio (up to 2.29 × 105%), which mainly originates from the half-metallicity of CrSe2induced by charge transfer at MoSe2/CrSe2interface. Relatively high TMR values (over 1 × 103%) are always maintained at small bias voltages (|Vb| ≤ 0.35 V). Our work have for the first time theoretically verified feasibility of realizing the transition of 2D CrSe2from metallicity to half-metallicity in the vdW MTJ and yielding excellent spin-filtering and giant magnetoresistance via electrode interface engineering, thereby providing important theoretical guidance for the experimental design of high-performance vdW MTJs in spintronic devices.
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影响因子：
3
作者：
Grimme, Stefan
通讯作者：
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影响因子：
2.8
作者：
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作者：
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通讯作者：
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作者：
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通讯作者：
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