Properties of 1.0-MeV-Electron-Irradiated Defect Centers in Silicon
Properties of 1.0-MeV-Electron-Irradiated Defect Centers in Silicon
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DOI：
10.1103/physrevb.7.4587
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发表时间：
1973-05
影响因子：
3.7
通讯作者：
J. Walker;C. Sah
中科院分区：
文献类型：
--
作者：
J. Walker;C. Sah
使用热刺激电容测量观察到在1.0-MeV电子辐照的硅中的电活性缺陷的存在。热发射率和激活能的捕获多数载流子，杂质的依赖性，和退火行为的这些缺陷被确定。观察到退火引入的缺陷。共测定了14个热活化能。氧空位对和磷空位对通过杂质依赖性和退火行为与174和471毫电子伏的热激活能相关。与其他已发表的数据进行了比较。电荷态的测量结果表明，带隙中部以上的缺陷是受主，带隙中部以下的缺陷是施主。
The presence of electrically active defects in 1.0-MeV-electron-irradiated silicon was observed using thermally stimulated capacitance measurements. Thermal-emission rates and activation energies of trapped majority carriers, impurity dependences, and annealing behavior of these defects were determined. The introduction of defects by annealing was observed. A total of 14 thermal-activation energies were measured. The oxygen-vacancy pair and the phosphorous-vacancy pair were correlated with thermal-activation energies of 174 and 471 meV through impurity dependences and annealing behavior. Comparison with other published data was made. The charge states were measured and it was found that the defects above midgap are acceptors; those below midgap are donors.