Coexistence of Urbach‐Tail‐Like Localized States and Metallic Conduction Channels in Nitrogen‐Doped 3D Curved Graphene
Coexistence of Urbach‐Tail‐Like Localized States and Metallic Conduction Channels in Nitrogen‐Doped 3D Curved Graphene
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氮掺杂 3D 弯曲石墨烯中乌尔巴赫尾状局域态与金属传导通道的共存
DOI：
10.1002/adma.202205986
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发表时间：
2022
影响因子：
29.4
通讯作者：
Chen Mingwei
中科院分区：
文献类型：
--
作者：
Tanabe Yoichi;Ito Yoshikazu;Sugawara Katsuaki;Jeong Samuel;Ohto Tatsuhiko;Nishiuchi Tomohiko;Kawada Naoaki;Kimura Shojiro;Aleman Christopher Florencio;Takahashi Takashi;Kotani Motoko;Chen Mingwei
氮(N)掺杂是调整石墨烯化学和物理性质的最有效方法之一。通过氮掺杂剂与石墨烯晶格三维曲率之间的相互作用，氮掺杂3D石墨烯在电催化和太阳能收集方面表现出优异的性能，可用于能源和环境应用。然而，电输运性质和电子态是理解3D石墨烯中N掺杂效应起源的关键因素，但仍然缺失。采用双电层晶体管方法系统地研究了N掺杂三维石墨烯的电子特性。结果表明，具有背景金属输运通道的氮掺杂三维石墨烯中性点周围存在类乌尔巴赫尾局域态。由N掺杂剂和石墨烯的三维曲率协同作用产生的电子态的双重性质可能是N掺杂3D石墨烯高电催化、增强分子吸附和光吸收的电子起源。
Nitrogen (N) doping is one of the most effective approaches to tailor the chemical and physical properties of graphene. By the interplay between N dopants and 3D curvature of graphene lattices, N‐doped 3D graphene displays superior performance in electrocatalysis and solar‐energy harvesting for energy and environmental applications. However, the electrical transport properties and the electronic states, which are the key factors to understand the origins of the N‐doping effect in 3D graphene, are still missing. The electronic properties of N‐doped 3D graphene are systematically investigated by an electric‐double‐layer transistor method. It is demonstrated that Urbach‐tail‐like localized states are located around the neutral point of N‐doped 3D graphene with the background metallic transport channels. The dual nature of electronic states, generated by the synergistic effect of N dopants and 3D curvature of graphene, can be the electronic origin of the high electrocatalysis, enhanced molecular adsorption, and light absorption of N‐doped 3D graphene.