Nature of the Peierls- to Mott-insulator transition in 1D
Nature of the Peierls- to Mott-insulator transition in 1D
复制标题
一维中 Peierls 到 Mott 绝缘体转变的性质
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
G. Wellein
中科院分区：
文献类型：
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作者：
H. Fehske;A. Kampf;M. Sekania;G. Wellein
翻译后摘要：为了澄清从Peierls带绝缘体的交叉相关的莫特-哈伯德绝缘体的物理，我们分析了基态和光谱特性的一维半填充的Holstein-Hubbard模型，使用准精确的数值技术。在绝热极限的过渡连接到带莫特绝缘体过渡的离子哈伯德模型。取决于电子-声子耦合和哈伯德相互作用的强度的过渡是第一级或不断演变跨越一个狭窄的中间阶段，有限的自旋，电荷，和光学激发间隙。
Abstract:In order to clarify the physics of the crossover from a Peierls band insulator to a correlated Mott-Hubbard insulator, we analyze ground-state and spectral properties of the one-dimensional half-filled Holstein-Hubbard model using quasi-exact numerical techniques. In the adiabatic limit the transition is connected to the band to Mott insulator transition of the ionic Hubbard model. Depending on the strengths of the electron-phonon coupling and the Hubbard interaction the transition is either first order or evolves continuously across a narrow intermediate phase with finite spin, charge, and optical excitation gaps.