Operating Voltage Constraints in 45-nm SOI nMOSFETs and Cascode Cores
Operating Voltage Constraints in 45-nm SOI nMOSFETs and Cascode Cores
复制标题
45 nm SOI nMOSFET 和共源共栅内核的工作电压限制
DOI：
--
复制
发表时间：
2013
影响因子：
3.1
通讯作者：
John D. Cressler
中科院分区：
文献类型：
--
作者：
Rajan Arora;John D. Cressler
我们研究了45 nm SOI射频nMOSFET和由这些器件构成的共源共栅芯片的工作电压限制和热载流子可靠性(HCR)。该装置采用了“浮动”机构和“接触”机构两种方案。实验结果表明，与体接触(BC)器件相比，浮体(FB)器件具有更大的热载流子退化。还研究了具有两个FB器件(FB-FB)、具有一个BC器件和一个FB器件(BC-FB)以及具有两个BC器件(BC-BC)的Cascode核心。评估了这些共源共栅核心在DC与射频(RF)性能与HCR之间的权衡。与在相似应力条件下运行的单个器件相比，共源共源共栅核心具有更长的可靠性寿命。与BC-FB和FB-FB级联核心拓扑结构相比，BC-BC级联核心具有更长的可靠性寿命。利用校准技术计算机辅助设计(TCAD)模拟，探索了在这些器件和共源共栅芯片中观察到的热载流子退化背后的物理机制。综上所述，这些结果对利用45 nm SOI工艺实现高性能和高可靠性的射频电路设计具有重要的指导意义。
We investigate the operating voltage constraints and hot carrier reliability (HCR) of 45-nm SOI RF nMOSFETs and cascode cores built from these devices. The devices were implemented with both “floating” body and “contacted” body schemes. It is shown through experimental results that floating-body (FB) devices have greater hot carrier degradation compared with body-contacted (BC) devices. Cascode cores designed with two FB devices (FB-FB), with one BC device and one FB device (BC-FB), and with two BC devices (BC-BC), were also investigated. The tradeoffs in the dc versus radio-frequency (RF) performance versus the HCR of these cascode cores were assessed. The cascode cores have a much longer reliability lifetime compared with a single device operating under similar stress conditions. The BC-BC cascode core is shown to have a much longer reliability lifetime compared with BC-FB and FB-FB cascode core topologies. The physical mechanisms behind the observed hot carrier degradation in these devices and cascode cores are explored using calibrated technology computer-aided design (TCAD) simulations. Taken together, these results suggest some important implications for realizing high-performance and high-reliability RF circuit designs using 45-nm CMOS-on-SOI technology.