Large spin signals in n+-Si/MgO/Co2Fe0.4Mn0.6Si lateral spin-valve devices
Large spin signals in n+-Si/MgO/Co2Fe0.4Mn0.6Si lateral spin-valve devices
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DOI:
10.1063/1.5132701
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发表时间:
2020-02-24
影响因子:
3.2
通讯作者:
Ando, Yasuo
中科院分区:
文献类型:
--
作者:
Koike, Takeo;Oogane, Mikihiko;Ando, Yasuo
The spin polarization factor was investigated using electrical spin injection at low temperatures in n(+)-Si(100)/MgO/ferromagnet lateral spin-valve devices with Co2Fe0.4Mn0.6Si (CFMS) and CoFe electrodes. CFMS films were annealed at different post-annealing temperatures (T-a). Although atomic diffusion of CFMS into the silicon channel was observed at high annealing temperatures, the CFMS device annealed at a T-a of 350 degrees C, clearly showing a narrow Hanle signal measured using the three-terminal Hanle effect; a consistent spin relaxation time of 7.1 +/- 0.4 ns and spin diffusion length of 1.6 +/- 0.2 mu m were obtained at 10 K. A local three-terminal spin-valve (L-3TSV) signal from the CFMS lateral spin-valve device was obtained at about 370 mu V, three times larger than that of the CoFe device. The tunnel spin polarization factor was evaluated from the L-3TSV signals by an analytical equation that considered the spin drift effect. The estimated tunnel spin polarization factor for CFMS was 45% at a V-bias of about 600 mV, while that for CoFe was 18%. This result indicates that the high spin polarization of CFMS is responsible for the large intensity of the L-3TSV signal and that CFMS is a promising FM material for electrical spin injection into silicon. Published under license by AIP Publishing.