Effect of oxygen vacancies in the electron transfer layer SiZnSnO on the performance of perovskite solar cells
Effect of oxygen vacancies in the electron transfer layer SiZnSnO on the performance of perovskite solar cells
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DOI：
10.1016/j.jallcom.2020.155284
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发表时间：
2020-09
影响因子：
6.2
通讯作者：
Shaoshuai Miao;Qianqian Yang;X. Ai;Kai Yang;J. Deng;Yanru Guo;Shuai Yuan;Hao Zhang
中科院分区：
文献类型：
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作者：
Shaoshuai Miao;Qianqian Yang;X. Ai;Kai Yang;J. Deng;Yanru Guo;Shuai Yuan;Hao Zhang
近年来，低成本、高效率的钙钛矿太阳能电池发展迅速。鉴于钙钛矿太阳能电池的潜在商业化，对其功能层进行升级是非常重要的。ZnSnO（ZTO）具有高透过率的优点，常用作太阳能电池的电子传输层。ZTO中的氧空位不仅起着载流子的作用，而且是ZTO中的主要缺陷。因此我们通过制备不同Si掺杂浓度的ZTO太阳能电池来研究ZTO中氧空位对太阳能电池的影响。本文采用射频磁控溅射法制备了不同Si浓度的非晶金属氧化物Si-ZnSnO（SZTO）薄膜。XPS结果表明，Si掺杂可以显著降低SZTO中的氧空位密度。载流子动力学研究发现，SZTO中氧空位的减少也可以提高钙钛矿太阳能电池的电子提取和传输能力。通过改进的电子转移层，钙钛矿太阳能电池的最大光电转换效率为13.4%，开路电压为1.04 V，短路电流为21.6 mAcm−2。填充因子为0.67。
In recent years, perovskite solar cells with low cost and high efficiency are developing rapidly. In view of the potential commercialization of perovskite solar cells, it is very important to upgrade its functional layer. ZnSnO (ZTO) has the advantages of high transmittance, so it is often used as the electron transport layer of solar cells. Oxygen vacancies in ZTO not only plays the role of carrier, but also is the main defect in ZTO. So we study the impact of oxygen vacancies in ZTO to solar cells by preparing ZTO solar cells with different Si doping concentrations. In this work, the amorphous metal oxide films Si–ZnSnO (SZTO) with different Si concentrations were prepared by RF magnetron sputtering. The XPS results indicate that the oxygen vacancies density in SZTO can be significantly reduced by Si doping. The carrier dynamics studies found that the electronic extraction and transfer ability of perovskite solar cell can be also improved with the reduction of oxygen vacancies in SZTO. With an improved electron transfer layer, the perovskite solar cell has a maximum photoelectric conversion efficiency of 13.4%, an open circuit voltage of 1.04 V and a short circuit current of 21.6 mAcm−2. Filling factor is 0.67.